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| (R) STPS1045B/H POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS n n n n 10 A 45 V 0.57 V K K NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY K A A A K A DESCRIPTION High voltage Schottky rectifier suited for Switch Mode Power Supplies and other Power Converters. Packaged in DPAK and IPAK, these devices are intended for use in high frequency circuitries where low switching losses are required. DPAK STPS1045B IPAK STPS1045H ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) / pin IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current / pin Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage Tc = 150C d = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1KHz Value 45 7 10 75 1 - 65 to + 175 175 10000 Unit V A A A A C C V/s May 2000 - Ed: 2B 1/5 STPS1045B/H THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter Value 3 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2 % **tp = 5 ms, < 2% Min. Typ. 7 Max. 100 15 0.63 0.57 0.84 0.72 Unit A mA V VR = 45 V IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.65 0.5 To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 IF(av) (A) 5 6 7 8 9 =tp/T T Fig. 2: Average forward current versus ambient temperature (=0.5). IF(av)(A) = 0.05 = 0.1 = 0.2 = 0.5 12 Rth(j-a)=Rth(j-c) 10 =1 8 6 4 T Rth(j-a)=15C/W Rth(j-a)=70C/W 2 tp 10 11 12 0 =tp/T tp Tamb(C) 50 75 100 125 150 175 0 25 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 120 100 80 Tc=50C Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 = 0.5 60 Tc=100C 40 Tc=150C = 0.2 = 0.1 T 20 IM t 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E-2 0.0 1E-4 =tp/T tp 1E-3 1E-1 1E+0 2/5 STPS1045B/H Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 0 5 10 15 Tj=150C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz Tj=25C Tj=125C Tj=100C Tj=75C Tj=50C Tj=25C 500 200 VR(V) 30 35 40 45 VR(V) 20 25 100 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m) (STPS1045B). Rth(j-a) (C/W) 100 IFM(A) 100.0 Tj=125C (Typical values) 80 10.0 Tj=125C Tj=25C 60 40 1.0 20 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 S(Cu) (cm) 0 0 2 4 6 8 10 12 14 16 18 20 3/5 STPS1045B/H PACKAGE MECHANICAL DATA IPAK DIMENSIONS REF. A E B2 L2 C2 Millimeters Min. Typ. Max. Min. 2.4 1.1 1.3 0.9 5.4 0.85 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.086 0.035 0.027 0.025 0.204 2.2 0.9 0.7 0.64 5.2 Inches Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.035 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10 D H L L1 B6 B3 B V1 A1 B5 G C A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 n Cooling method: by conduction (C) 4/5 STPS1045B/H PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 0.60 0 1.00 0.023 8 0 Typ. Max 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 Min. 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.031 0.039 8 Inches Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 n Cooling method: by conduction (C) FOOT PRINT DIMENSIONS (in millimeters) 6.7 6.7 6.7 3 1.6 2.3 2.3 1.6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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